Potential gold(I) precursors evaluated for atomic layer deposition

Result date: 01/01/2017
Author: M. Maekelae
Institute: Laboratory of Inorganic Chemistry, Department of Chemistry, University of Helsinki, P.O. Box. 55, FI-00014 Helsinki, Finland
Publication: J. Vac. Sci. Technol. A
Instrument: Argus
In total, seven Au(I) compounds were synthesized and preliminarily evaluated for atomic layer deposition (ALD). One of the compounds, a liquid (bis(trimethylsilyl)amido)(triethylphosphine)gold(I) (Au(N(SiMe3)2)(PEt3)), was chosen for the ALD growth experiments. It was applied with potential reducing agents and hydrogen sulfide. The best results in respect to growth rate and film properties were achieved when Au(N(SiMe3)2)(PEt3) and dimethylamine borane [BH3(NHMe2)] were applied alternately. No perfect self-limiting growth, characteristic for ALD, was confirmed. However, the process produced polycrystalline, pure, and relatively uniform particulate Au thin films. In general, the process was well controllable, but the reduction power of BH3(NHMe2) was noticed to be dependent on the deposition temperature and on the surface in contact with it.