Structural and Electrical Properties of MoTe2 and MoSe2 Grown by Molecular Beam Epitaxy

Result date: 01/01/2016
Author: A. Roy
Institute: Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758, United States
Publication: ACS Appl. Mater. Interfaces
Instrument: MBE Systems
We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In situ structural and chemical analyses reveal stoichiometric layered film growth with atomically smooth surface morphologies. Film growth along the (001) direction is confirmed by X-ray diffraction, and the crystalline nature of growth in the 2H phase is evident from Raman spectroscopy. Transmission electron microscopy is used to confirm the layered film structure and hexagonal arrangement of surface atoms. Temperature-dependent electrical measurements show an insulating behavior that agrees well with a two-dimensional variable-range hopping model, suggesting that transport in these films is dominated by localized charge-carrier states.