Bi atoms mobility-driven circular domains at the Bi/InAs(111) interface

Result date: 01/01/2016
Author: M.C. Richter,
Institute: DSM, IRAMIS, Service de Physique de l’Etat Condensé, CEA-Saclay, 91191 Gif-sur-Yvette, France
Publication: Surf. Sci.
Instrument: NanoESCA
Bi films deposited on InAs(111) A and B sides have been studied by photoemission electron microscopy. A series of snapshots acquired during sequential annealing of the interfaces at temperatures below and above the melting temperature of Bi allowed obtaining a comprehensive image of the topographic and chemical evolutions of the Bi films that are found to be InAs side dependent. On the A side, a morphology of circular patterns controlled by Bi atoms mobility is observed. The patterns are formed on the pristine In-terminated InAs(111) surface covered by a weakly bonded Bi bilayer. On the B side, no particular morphology is observed due to a stronger chemical interaction between Bi and As atoms as evidenced by the spatially-resolved core-level photoelectron spectra.