SUSI

Silicon Sublimation Sources

  • Growth of thin Si layers
  • Si Doping in III-V MBE
  • Doping in Silicon MBE:

A very special application of the SUSI is the operation as a doping source for Si MBE growth by using a heavily boron or phosphorus doped silicon filament:

- Boron Doping
The source material for sublimation is boron doped to about 1020 cm-3. The maximum boron concentration in the epitaxial film is about 2 x 1019 cm-3

- Phosphorus Doping
The source material for sublimation is phosphorus doped to about (3 to 4) x 1019 cm-3.

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